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Technical specifications, features, applications and purchasing information.
| Brand | INFINEON |
| Model Number | FF200R12MT4 |
| Product Category | IGBT Power Module |
| Manufacturer | Infineon Technologies |
| Product Family | EconoDUAL 2 |
| Package | AG-ECONOD-2-1 |
| Circuit Configuration | Dual IGBT, Half-Bridge |
| Semiconductor Technology | Fast Trench / Fieldstop IGBT4 |
| Integrated Diodes | Emitter Controlled 4 Freewheeling Diodes |
| Integrated Temperature Sensor | NTC Thermistor |
| Collector-Emitter Blocking Voltage (VCES) | 1200 V |
| Nominal Collector Current (IC nom) | 200 A at Case Temperature 100°C |
| Continuous Collector Current at 25°C | 295 A, Subject to Junction Temperature Limits |
| Repetitive Peak Collector Current (ICRM) | 400 A at 1 ms Pulse Duration |
| Maximum Total Power Dissipation | 1050 W at Case Temperature 25°C |
| Peak Gate-Emitter Voltage | ±20 V |
| Typical Collector-Emitter Saturation Voltage | 1.75 V at 200 A, VGE 15 V and Junction Temperature 25°C |
| Maximum Collector-Emitter Saturation Voltage | 2.15 V at 200 A, VGE 15 V and Junction Temperature 25°C |
| Gate Threshold Voltage | 5.2 to 6.4 V at 25°C |
| Typical Internal Gate Resistance | 3.8 Ω |
| Typical Gate Charge | 1.65 µC with VGE from -15 V to +15 V |
| Typical Input Capacitance | 14 nF at 25 V Collector-Emitter Voltage |
| IGBT Junction-to-Case Thermal Resistance | 0.14 K/W per IGBT |
| IGBT Operating Junction Temperature | -40 to +150°C Under Switching Conditions |
| Diode Repetitive Peak Reverse Voltage | 1200 V |
| Diode Continuous Forward Current | 200 A |
| Diode Repetitive Peak Forward Current | 400 A for 1 ms Pulse |
| Diode Typical Forward Voltage | 1.70 V at 200 A and 25°C |
| Diode Junction-to-Case Thermal Resistance | 0.25 K/W per Diode |
| NTC Thermistor Resistance | 5 kΩ at 25°C |
| Isolation Test Voltage | 2.5 kV RMS, 50 Hz for 1 Minute |
| Baseplate Material | Copper |
| Internal Insulation | Aluminum Oxide (Al2O3) |
| Module Case-to-Heatsink Thermal Resistance | 0.02 K/W Under Datasheet Thermal Interface Conditions |
| Module Stray Inductance | 30 nH |
| Storage Temperature | -40 to +125°C |
| Module Mounting | M5 Screws, 3 to 6 N·m According to Applicable Installation Note |
| Electrical Terminal Connection | M6 Screws, 2.5 to 5 N·m According to Applicable Installation Note |
| Module Weight | Approximately 200 g |
| Typical Applications | Motor Drives and Uninterruptible Power Supply Systems |
| Manufacturer Datasheet | Infineon FF200R12MT4 Technical Information, Revision 2.5, October 29, 2013 |
| Datasheet Status | Preliminary Data; Confirm Final Design Limits with Current Manufacturer Documentation |
The INFINEON FF200R12MT4 combines two 1200 V IGBT switches in a half-bridge configuration, with a nominal collector current rating of 200 A under specified thermal conditions. It is intended for compatible high-power switching applications.
The module uses Infineon's fast Trench / Fieldstop IGBT4 semiconductor technology, designed to provide high current density, comparatively low saturation voltage and low switching losses under suitable gate-drive conditions.
Emitter Controlled 4 diodes are integrated alongside the IGBT switches, providing reverse-current paths for appropriate inverter and other inductive-load circuit configurations.
A built-in NTC thermistor with a nominal resistance of 5 kΩ at 25°C provides a temperature-sensing interface for appropriately designed monitoring and thermal protection circuits.
The EconoDUAL 2 package features a copper baseplate and aluminum oxide internal insulation, with a specified 2.5 kV RMS isolation test voltage. Proper heatsink mounting and thermal interface materials are essential.
The dual-switch architecture, 400 A repetitive peak collector current rating for 1 ms and industry-standard module housing support power stage design and maintenance in suitably engineered motor-drive and UPS systems.
We support online purchase of the INFINEON FF200R12MT4 IGBT Power Module. If you need to make bulk purchases and inquire about other products, please contact our team to inform us of your purchase requirements. We will provide you with information such as quantity quotations, delivery dates, and transportation methods.
What is the INFINEON FF200R12MT4?
It is a 1200 V, 200 A nominal EconoDUAL 2 IGBT power module containing two fast Trench / Fieldstop IGBT4 switches, integrated freewheeling diodes and an NTC thermistor.
What is the collector-emitter voltage rating?
The maximum collector-emitter blocking voltage, VCES, is 1200 V. This is a semiconductor blocking rating, not an unrestricted continuous application bus-voltage rating.
What is the nominal current rating?
The nominal collector current is 200 A at a case temperature of 100°C, subject to junction temperature and cooling requirements. The datasheet also lists 295 A at a case temperature of 25°C under specified conditions.
Is the FF200R12MT4 a single IGBT or a dual module?
It is a dual IGBT half-bridge module, incorporating two switching devices with their respective freewheeling diodes.
What is the maximum repetitive peak collector current?
The datasheet specifies 400 A for a 1 ms repetitive current pulse under the stated conditions.
Does the module include a temperature sensor?
Yes. It includes an NTC thermistor rated at 5 kΩ at 25°C. The monitoring circuit must use the specified NTC characteristics.
What type of semiconductor technology is used?
The module uses Infineon fast Trench / Fieldstop IGBT4 technology and Emitter Controlled 4 diode technology.
What is the typical collector-emitter saturation voltage?
The typical VCE(sat) is 1.75 V at a collector current of 200 A, gate-emitter voltage of 15 V and junction temperature of 25°C. The maximum value under these conditions is 2.15 V.
What gate-drive voltage should be used?
The absolute peak gate-emitter voltage rating is ±20 V. The manufacturer characterizes switching performance using specified gate-drive conditions, including ±15 V for certain tests. A suitable gate driver and protection circuit are required.
What is the isolation test voltage?
The module has a specified isolation test voltage of 2.5 kV RMS at 50 Hz for one minute, with an insulated copper baseplate and aluminum oxide internal insulation.
Is FF200R12MT4 the same as FF200R12KT4?
No. These are different Infineon module designations and must not be treated as direct replacements. Compare the package, mechanical dimensions, terminal configuration, electrical characteristics and thermal ratings before substitution.
What should be checked before ordering?
Confirm the complete model FF200R12MT4, 1200 V blocking voltage, 200 A nominal collector current, EconoDUAL 2 AG-ECONOD-2-1 package, dual half-bridge configuration, terminal arrangement, gate-drive compatibility, NTC characteristics, and thermal management requirements against your system documentation before purchase.
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| Brand | INFINEON |
| Model Number | FF200R12MT4 |
| Product Category | IGBT Power Module |
| Manufacturer | Infineon Technologies |
| Product Family | EconoDUAL 2 |
| Package | AG-ECONOD-2-1 |
| Circuit Configuration | Dual IGBT, Half-Bridge |
| Semiconductor Technology | Fast Trench / Fieldstop IGBT4 |
| Integrated Diodes | Emitter Controlled 4 Freewheeling Diodes |
| Integrated Temperature Sensor | NTC Thermistor |
| Collector-Emitter Blocking Voltage (VCES) | 1200 V |
| Nominal Collector Current (IC nom) | 200 A at Case Temperature 100°C |
| Continuous Collector Current at 25°C | 295 A, Subject to Junction Temperature Limits |
| Repetitive Peak Collector Current (ICRM) | 400 A at 1 ms Pulse Duration |
| Maximum Total Power Dissipation | 1050 W at Case Temperature 25°C |
| Peak Gate-Emitter Voltage | ±20 V |
| Typical Collector-Emitter Saturation Voltage | 1.75 V at 200 A, VGE 15 V and Junction Temperature 25°C |
| Maximum Collector-Emitter Saturation Voltage | 2.15 V at 200 A, VGE 15 V and Junction Temperature 25°C |
| Gate Threshold Voltage | 5.2 to 6.4 V at 25°C |
| Typical Internal Gate Resistance | 3.8 Ω |
| Typical Gate Charge | 1.65 µC with VGE from -15 V to +15 V |
| Typical Input Capacitance | 14 nF at 25 V Collector-Emitter Voltage |
| IGBT Junction-to-Case Thermal Resistance | 0.14 K/W per IGBT |
| IGBT Operating Junction Temperature | -40 to +150°C Under Switching Conditions |
| Diode Repetitive Peak Reverse Voltage | 1200 V |
| Diode Continuous Forward Current | 200 A |
| Diode Repetitive Peak Forward Current | 400 A for 1 ms Pulse |
| Diode Typical Forward Voltage | 1.70 V at 200 A and 25°C |
| Diode Junction-to-Case Thermal Resistance | 0.25 K/W per Diode |
| NTC Thermistor Resistance | 5 kΩ at 25°C |
| Isolation Test Voltage | 2.5 kV RMS, 50 Hz for 1 Minute |
| Baseplate Material | Copper |
| Internal Insulation | Aluminum Oxide (Al2O3) |
| Module Case-to-Heatsink Thermal Resistance | 0.02 K/W Under Datasheet Thermal Interface Conditions |
| Module Stray Inductance | 30 nH |
| Storage Temperature | -40 to +125°C |
| Module Mounting | M5 Screws, 3 to 6 N·m According to Applicable Installation Note |
| Electrical Terminal Connection | M6 Screws, 2.5 to 5 N·m According to Applicable Installation Note |
| Module Weight | Approximately 200 g |
| Typical Applications | Motor Drives and Uninterruptible Power Supply Systems |
| Manufacturer Datasheet | Infineon FF200R12MT4 Technical Information, Revision 2.5, October 29, 2013 |
| Datasheet Status | Preliminary Data; Confirm Final Design Limits with Current Manufacturer Documentation |
The INFINEON FF200R12MT4 combines two 1200 V IGBT switches in a half-bridge configuration, with a nominal collector current rating of 200 A under specified thermal conditions. It is intended for compatible high-power switching applications.
The module uses Infineon's fast Trench / Fieldstop IGBT4 semiconductor technology, designed to provide high current density, comparatively low saturation voltage and low switching losses under suitable gate-drive conditions.
Emitter Controlled 4 diodes are integrated alongside the IGBT switches, providing reverse-current paths for appropriate inverter and other inductive-load circuit configurations.
A built-in NTC thermistor with a nominal resistance of 5 kΩ at 25°C provides a temperature-sensing interface for appropriately designed monitoring and thermal protection circuits.
The EconoDUAL 2 package features a copper baseplate and aluminum oxide internal insulation, with a specified 2.5 kV RMS isolation test voltage. Proper heatsink mounting and thermal interface materials are essential.
The dual-switch architecture, 400 A repetitive peak collector current rating for 1 ms and industry-standard module housing support power stage design and maintenance in suitably engineered motor-drive and UPS systems.
We support online purchase of the INFINEON FF200R12MT4 IGBT Power Module. If you need to make bulk purchases and inquire about other products, please contact our team to inform us of your purchase requirements. We will provide you with information such as quantity quotations, delivery dates, and transportation methods.
What is the INFINEON FF200R12MT4?
It is a 1200 V, 200 A nominal EconoDUAL 2 IGBT power module containing two fast Trench / Fieldstop IGBT4 switches, integrated freewheeling diodes and an NTC thermistor.
What is the collector-emitter voltage rating?
The maximum collector-emitter blocking voltage, VCES, is 1200 V. This is a semiconductor blocking rating, not an unrestricted continuous application bus-voltage rating.
What is the nominal current rating?
The nominal collector current is 200 A at a case temperature of 100°C, subject to junction temperature and cooling requirements. The datasheet also lists 295 A at a case temperature of 25°C under specified conditions.
Is the FF200R12MT4 a single IGBT or a dual module?
It is a dual IGBT half-bridge module, incorporating two switching devices with their respective freewheeling diodes.
What is the maximum repetitive peak collector current?
The datasheet specifies 400 A for a 1 ms repetitive current pulse under the stated conditions.
Does the module include a temperature sensor?
Yes. It includes an NTC thermistor rated at 5 kΩ at 25°C. The monitoring circuit must use the specified NTC characteristics.
What type of semiconductor technology is used?
The module uses Infineon fast Trench / Fieldstop IGBT4 technology and Emitter Controlled 4 diode technology.
What is the typical collector-emitter saturation voltage?
The typical VCE(sat) is 1.75 V at a collector current of 200 A, gate-emitter voltage of 15 V and junction temperature of 25°C. The maximum value under these conditions is 2.15 V.
What gate-drive voltage should be used?
The absolute peak gate-emitter voltage rating is ±20 V. The manufacturer characterizes switching performance using specified gate-drive conditions, including ±15 V for certain tests. A suitable gate driver and protection circuit are required.
What is the isolation test voltage?
The module has a specified isolation test voltage of 2.5 kV RMS at 50 Hz for one minute, with an insulated copper baseplate and aluminum oxide internal insulation.
Is FF200R12MT4 the same as FF200R12KT4?
No. These are different Infineon module designations and must not be treated as direct replacements. Compare the package, mechanical dimensions, terminal configuration, electrical characteristics and thermal ratings before substitution.
What should be checked before ordering?
Confirm the complete model FF200R12MT4, 1200 V blocking voltage, 200 A nominal collector current, EconoDUAL 2 AG-ECONOD-2-1 package, dual half-bridge configuration, terminal arrangement, gate-drive compatibility, NTC characteristics, and thermal management requirements against your system documentation before purchase.
